| PART |
Description |
Maker |
| SFRC9130S.5B |
10 AMP /100 Volts 300 mΩ Radiation Tolerant P-Channel MOSFET
10 AMP /100 Volts 300 mヘ Radiation Tolerant P-Channel MOSFET
|
SSDI[Solid States Devices, Inc]
|
| SDR953CT/3 SDR955CT/3 SDR954CT/3 |
100 AMP 300 - 500 VOLTS 35 nsec HYPER FAST COMMONCATHODE CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
| CPT30035 CPT30090 CPT30040 CPT30045 CPT30050 CPT30 |
300 Amp Rectifier 30 to 90 Volts Schottky Barrier
300 Amp Rectifier 30 to 90 Volts Schottky Barrier 300 A, 80 V, SILICON, RECTIFIER DIODE
|
Micro Commercial Compon...
MCC[Micro Commercial Components]
Micro Commercial Components, Corp.
|
| T7600130 T7601230 T7602030 T7601630 T7600430 T7600 |
Phase Control SCR (300 Amperes Avg 100-2000 Volts) 470 A, 1000 V, SCR
Phase Control SCR (300 Amperes Avg 100-2000 Volts) 470 A, 1200 V, SCR
Phase Control SCR (300 Amperes Avg 100-2000 Volts) 470 A, 600 V, SCR
Phase Control SCR (300 Amperes Average 2000 Volts)
|
Powerex Power Semicondu...
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| QRF1430T30 QRC1430T30 QR1430T30 QRD1430T30 |
Fast Recovery Diode Module (300 Amp/1400 Volts) 快速恢复二极管模块00 Amp/1400伏特
|
http://
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| SDR643CTS1S SDR643CTS1TX SDR643CTS1TXV SDR643CTS1 |
50 AMP 300-700 Volts 35 nsec Centertap Rectifier
|
Solid States Devices, Inc
|
| SHF1103SM SHF1100SM SHF1101SM SHF1102SM |
1 AMP 50 - 300 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR9102PHC SDR9100PHC SDR9101PHC |
100 AMP 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| 1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR
300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp.
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| PMBTA92 PMBTA92215 PMBTA92-T |
100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
PNP high-voltage transistor - Complement: PMBTA42 ; fT min: 50 MHz; hFE max:>40 ; hFE min: 40 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 300 V; Package: SOT23 (TO-236AB); Container: Tape reel smd
|
NXP Semiconductors
|
| MMFT960T106 MMFT960T1 MMFT960T1G |
Power MOSFET 300 mA, 60 Volts; Package: SOT-223 (TO-261) 4 LEAD; No of Pins: 4; Container: Tape and Reel; Qty per Container: 1000 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
Power MOSFET 300 mA, 60 Volts N−Channel SOT−223
|
ON Semiconductor
|
